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Wide‐locking range divide‐by‐4 injection‐locked frequency divider using injection MOSFET DC‐biased above threshold region
Author(s) -
Jang ShengLyang,
Chang Yu–Tai,
Hsue ChingWen,
Juang MiinHorng
Publication year - 2016
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2116
Subject(s) - frequency divider , electrical engineering , frequency multiplier , voltage doubler , cmos , transistor , voltage , watt , mosfet , power (physics) , physics , electronic engineering , materials science , engineering , voltage divider , quantum mechanics , dropout voltage
Summary A novel wide locking range divide‐by‐4 injection‐locked frequency divider (ILFD) is proposed in the paper and was implemented in the TSMC 0.18 µm 1P6M CMOS process. The divide‐by‐4 ILFD uses two injection transistors in series and DC‐biased above threshold voltage and a frequency doubler to enhance the function of linear mixers. At the drain‐source bias of 0.9 V and at the incident power of 0 dBm, the locking range of the divide‐by‐4 is 2.6 GHz; from the incident frequency 12.2 to 14.8 GHz, the percentage is 19.26%. The core power consumption is 10.35 mW. The die area of ILFD is 1.026 × 0.943 mm 2 . Copyright © 2015 John Wiley & Sons, Ltd.