Premium
Wide‐band divide‐by‐2 injection‐locked frequency divider using MOSFET mixers DC‐biased in subthreshold region
Author(s) -
Jang ShengLyang,
Lin FaBo,
Huang JhinFang
Publication year - 2015
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.2055
Subject(s) - frequency divider , subthreshold conduction , electrical engineering , voltage controlled oscillator , resonator , cmos , mosfet , voltage , optoelectronics , physics , materials science , engineering , transistor
Summary A novel wide locking range divide‐by‐2 injection‐locked frequency divider (ILFD) is proposed in the paper and was implemented in the TSMC 0.18‐µm 1P6M CMOS process. The divide‐by‐2 ILFD is based on a cross‐coupled voltage‐controlled oscillator (VCO) with an LC resonator and injection MOSFETs with source voltage coupled from ILFD output, and the injection MOSFET mixer is biased in subthreshold region. At the drain–source bias of 0.9 V, and at the incident power of 0 dBm the locking range of the divide‐by‐2 ILFD is 6.4 GHz; from the incident frequency 3.7 GHz to 10.1 GHz, the percentage is 92.75%. The core power consumption is 16.56 mW. The die area is 0.839 × 0.566 mm 2 . Copyright © 2015 John Wiley & Sons, Ltd.