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A sub‐1 V nanopower temperature‐compensated sub‐threshold CMOS voltage reference with 0.065%/V line sensitivity
Author(s) -
Magnelli Luca,
Crupi Felice,
Corsonello Pasquale,
Iannaccone Giuseppe
Publication year - 2015
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.1950
Subject(s) - voltage reference , cmos , voltage , sensitivity (control systems) , electrical engineering , compensation (psychology) , line regulation , line (geometry) , dissipation , threshold voltage , materials science , bandgap voltage reference , optoelectronics , physics , electronic engineering , engineering , transistor , dropout voltage , mathematics , psychology , geometry , psychoanalysis , thermodynamics
We present the design of a nanopower sub‐threshold CMOS voltage reference and the measurements performed over a set of more than 70 samples fabricated in 0.18 µm CMOS technology. The circuit provides a temperature‐compensated reference voltage of 259 mV with an extremely low line sensitivity of only 0.065% at the price of a less effective temperature compensation. The voltage reference properly works with a supply voltage down to 0.6 V and with a power dissipation of only 22.3 nW. Very similar performance has been obtained with and without the inclusion of the start‐up circuit. Copyright © 2013 John Wiley & Sons, Ltd.