Premium
New SRAM design using body bias technique for low‐power and high‐speed applications
Author(s) -
Faraji Rasoul,
Naji Hamid Reza,
RahimiNezhad Majid,
Arabnejhad Mohammad
Publication year - 2014
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.1914
Subject(s) - static random access memory , transistor , power consumption , power (physics) , computer science , word (group theory) , voltage , line (geometry) , electronic engineering , electrical engineering , engineering , computer hardware , mathematics , physics , geometry , quantum mechanics
In this paper, a new SRAM cell with body‐bias actively controlled by a control circuit and word line is introduced to realize low‐power and high‐speed applications. The cell uses two word lines, which vary between positive and negative voltage levels to control the body bias of cell's transistors. In this design, using a peripheral control circuit with the least possible number of transistors, the access time is decreased and also a trade‐off between static and dynamic power consumption is provided. Compared to a conventional SRAM cell, the proposed cell reduces the static power consumption by 82% and improves the read performance by 40% and the write performance by 27%. Copyright © 2013 John Wiley & Sons, Ltd.