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A family of memristor‐based reactance‐less oscillators
Author(s) -
Zidan Mohammed Affan,
Omran Hesham,
Smith Casey,
Syed Ahad,
Radwan Ahmed Gomaa,
Salama Khaled Nabil
Publication year - 2014
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.1908
Subject(s) - memristor , reactance , oscillation (cell signaling) , capacitor , realization (probability) , inductor , transient (computer programming) , control theory (sociology) , topology (electrical circuits) , electronic engineering , computer science , physics , electrical engineering , engineering , mathematics , voltage , statistics , control (management) , artificial intelligence , biology , genetics , operating system
SUMMARY In this paper, we present for the first time a family of memristor‐based reactance‐less oscillators (MRLOs). The proposed oscillators require no reactive components, that is, inductors or capacitors, rather, the ‘resistance storage’ property of memristor is exploited to generate the oscillation. Different types of MRLO family are presented, and for each type, closed form expressions are derived for the oscillation condition, oscillation frequency, and range of oscillation. Derived equations are further verified using transient circuit simulations. A comparison between different MRLO types is also discussed. In addition, detailed fabrication steps of a memristor device and experimental results for the first MRLO physical realization are presented. Copyright © 2013 John Wiley & Sons, Ltd.