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A high‐order curvature‐corrected CMOS bandgap voltage reference with constant current technique
Author(s) -
Geng Junfeng,
Zhao Yiqiang,
Zhao Hongliang
Publication year - 2014
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.1836
Subject(s) - bandgap voltage reference , resistor , voltage reference , cmos , line regulation , electrical engineering , power supply rejection ratio , voltage , temperature coefficient , materials science , current mirror , amplifier , electronic engineering , optoelectronics , engineering , transistor , dropout voltage
SUMMARY A high‐order curvature‐corrected complementary metal–oxide–semiconductor (CMOS) bandgap voltage reference (BGR), utilizing the temperature‐dependent resistor and constant current technique, is presented. Considering the process variation, a resistor trimming network is introduced in this work. The circuit is implemented in a standard 0.35‐µm CMOS process. The measurement results have confirmed that the proposed BGR operates with a supply voltage of 1.8 V, consuming 45 μW at room temperature (25 °C), and the temperature coefficient of the output voltage reference is about 5.5 ppm/°C from −40 °C to 125 °C. The measured power supply rejection ratio is −38.8 dB at 1 kHz. The BGR is compatible with low‐voltage and low‐power circuit design when the structure of operational amplifiers and all the devices in the proposed bandgap reference are properly designed. Copyright © 2012 John Wiley & Sons, Ltd.