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Current Progress and Future Directions in Gas‐Phase Metal‐Organic Framework Thin‐Film Growth
Author(s) -
Han Sungmin,
Mullins C. Buddie
Publication year - 2020
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.202001504
Subject(s) - thin film , atomic layer deposition , chemical vapor deposition , physical vapor deposition , microelectronics , deposition (geology) , materials science , nanotechnology , layer (electronics) , combustion chemical vapor deposition , nanolithography , layer by layer , chemical engineering , carbon film , fabrication , medicine , paleontology , alternative medicine , pathology , sediment , engineering , biology
Deposition of materials as a thin film is important for various applications, such as sensors, microelectronic devices, and membranes. There have been breakthroughs in gas‐phase metal‐organic framework (MOF) thin‐film growth, which is more applicable to micro‐ and nanofabrication processes and also less harmful to the environment than solvent‐based methods. Three different types of gas‐phase MOF thin film deposition methods have been developed using chemical vapor deposition (CVD), atomic layer deposition (ALD), and physical vapor deposition (PVD)‐CVD combined techniques. The CVD‐based method basically converts metal oxide layers into MOF thin films by exposing the surface to ligand vapor. The ALD‐based method allows growing MOF thin films following layer‐by‐layer (LBL) growth by sequentially exposing gas‐phase metal and ligand precursors. The PVD‐CVD method uses PVD for metal deposition and CVD for ligand deposition, which is similar to LBL growth. These gas‐phase growth methods can broaden the use of MOFs in diverse areas. Herein, the current progress of gas‐phase MOF thin film growth is discussed and future directions suggested.