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Oxygen Vacancy Engineering in Tin(IV) Oxide Based Anode Materials toward Advanced Sodium‐Ion Batteries
Author(s) -
Ma Dingtao,
Li Yongliang,
Zhang Peixin,
Lin Zhiqun
Publication year - 2018
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201801694
Subject(s) - anode , tin , materials science , tin oxide , vacancy defect , oxygen , oxide , ion , electrode , nanotechnology , work (physics) , sodium , oxygen evolution , chemical engineering , inorganic chemistry , chemistry , electrochemistry , metallurgy , thermodynamics , physics , crystallography , organic chemistry , engineering
A high theoretical capacity of approximately 1400 mA h g −1 makes SnO 2 a promising anode material for sodium‐ion batteries (SIBs). However, large volume expansion, poor intrinsic conductivity, and sluggish reaction kinetics have greatly hindered its practical application. The controlled creation of oxygen vacancy (OV) defects allows the intrinsic properties of SnO 2 to be effectively modulated, but related work concerning SIBs is still lacking. In this Minireview, the mechanism of failure of SnO 2 electrodes is discussed and an overview of recent progress in the general synthesis of OV‐containing SnO 2 materials and the feasible detection of OVs in SnO 2 is presented. The use of OV‐containing SnO 2 ‐based anode materials in SIBs is also reviewed. Finally, challenges and future opportunities to engineer OVs for semiconductor oxides are examined.