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Effects of Self‐Assembled Monolayer Modification of Nickel Oxide Nanoparticles Layer on the Performance and Application of Inverted Perovskite Solar Cells
Author(s) -
Wang Qin,
Chueh ChuChen,
Zhao Ting,
Cheng Jiaqi,
Eslamian Morteza,
Choy Wallace C. H.,
Jen Alex K.Y.
Publication year - 2017
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201701262
Subject(s) - passivation , materials science , energy conversion efficiency , nanotechnology , perovskite (structure) , chemical engineering , monolayer , crystallization , nanoparticle , polyethylene terephthalate , layer (electronics) , optoelectronics , composite material , engineering
Entirely low‐temperature solution‐processed (≤100 °C) planar p‐i‐n perovskite solar cells (PSCs) offer great potential for commercialization of roll‐to‐roll fabricated photovoltaic devices. However, the stable inorganic hole‐transporting layer (HTL) in PSCs is usually processed at high temperature (200–500 °C), which is far beyond the tolerant temperature (≤150 °C) of roll‐to‐roll fabrication. In this context, inorganic NiO x nanoparticles (NPs) are an excellent candidate to serve as the HTL in PSCs, owing to their excellent solution processability at room temperature. However, the low‐temperature processing condition is usually accompanied with defect formation, which deteriorates the film quality and device efficiency to a large extent. To suppress this setback, we used a series of benzoic acid selfassembled monolayers (SAMs) to passivate the surface defects of the NiO x NPs and found that 4‐bromobenzoic acid could effectively play the role of the surface passivation. This SAM layer reduces the trap‐assisted recombination, minimizes the energy offset between the NiO x NPs and perovskite, and changes the HTL surface wettability, thus enhancing the perovskite crystallization, resulting in more stable PSCs with enhanced power conversion efficiency (PCE) of 18.4 %, exceeding the control device PCE (15.5 %). Also, we incorporated the above‐mentioned SAMs into flexible PSCs (F‐PSCs) and achieved one of the highest PCE of 16.2 % on a polyethylene terephthalate (PET) substrate with a remarkable power‐per‐weight of 26.9 W g −1 . This facile interfacial engineering method offers great potential for the large‐scale manufacturing and commercialization of PSCs.