Premium
Impact of Interfacial Layers in Perovskite Solar Cells
Author(s) -
Cho AnNa,
Park NamGyu
Publication year - 2017
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201701095
Subject(s) - perovskite (structure) , materials science , grain boundary , energy conversion efficiency , perovskite solar cell , photovoltaic system , halide , grain size , layer (electronics) , solar cell , nanotechnology , chemical engineering , optoelectronics , inorganic chemistry , chemistry , composite material , microstructure , ecology , engineering , biology
Perovskite solar cells (PCSs) are composed of organic–inorganic lead halide perovskite as the light harvester. Since the first report on a long‐term‐durable, 9.7 % efficient, solid‐state perovskite solar cell, organic–inorganic halide perovskites have received considerable attention because of their excellent optoelectronic properties. As a result, a power conversion efficiency (PCE) exceeding 22 % was certified. Controlling the grain size, grain boundary, morphology, and defects of the perovskite layer is important for achieving high efficiency. In addition, interfacial engineering is equally or more important to further improve the PCE through better charge collection and a reduction in charge recombination. In this Review, the type of interfacial layers and their impact on photovoltaic performance are investigated for both the normal and the inverted cell architectures. Four different interfaces of fluorine‐doped tin oxide (FTO)/electron‐transport layer (ETL), ETL/perovskite, perovskite/hole‐transport layer (HTL), and HTL/metal are classified, and their roles are investigated. The effects of interfacial engineering with organic or inorganic materials on photovoltaic performance are described in detail. Grain‐boundary engineering is also included because it is related to interfacial engineering and the grain boundary in the perovskite layer plays an important role in charge conduction, recombination, and chargecarrier life time.