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Room‐Temperature Atomic Layer Deposition of Al 2 O 3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells
Author(s) -
Kot Malgorzata,
Das Chittaranjan,
Wang Zhiping,
Henkel Karsten,
Rouissi Zied,
Wojciechowski Konrad,
Snaith Henry J.,
Schmeisser Dieter
Publication year - 2016
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201601186
Subject(s) - atomic layer deposition , perovskite (structure) , passivation , x ray photoelectron spectroscopy , energy conversion efficiency , materials science , deposition (geology) , layer (electronics) , chemical engineering , inorganic chemistry , analytical chemistry (journal) , chemistry , nanotechnology , optoelectronics , environmental chemistry , paleontology , sediment , engineering , biology
In this work, solar cells with a freshly made CH 3 NH 3 PbI 3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al 2 O 3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X‐ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT‐ALD‐Al 2 O 3 ‐covered perovskite films showed enhanced ambient air stability.