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Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials
Author(s) -
Stefik Morgan
Publication year - 2016
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201600457
Subject(s) - materials science , bismuth vanadate , bismuth , atomic layer deposition , chemical engineering , photoelectrochemistry , inorganic chemistry , water splitting , electrolyte , oxide , layer (electronics) , nanotechnology , electrode , chemistry , metallurgy , electrochemistry , photocatalysis , biochemistry , engineering , catalysis
The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO 4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO 4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh 3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO 4 . A selective etching process was used with vanadium‐rich depositions to enable the synthesis of phase‐pure BiVO 4 after spinodal decomposition. BiVO 4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm −2 at 1.23 V versus the reversible hydrogen electrode using a hole‐scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting.