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Improved Performance of Electroplated CZTS Thin‐Film Solar Cells with Bifacial Configuration
Author(s) -
Ge Jie,
Yu Yue,
Ke Weijun,
Li Jian,
Tan Xinxuan,
Wang Zhiwei,
Chu Junhao,
Yan Yanfa
Publication year - 2016
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201600440
Subject(s) - czts , materials science , annealing (glass) , indium tin oxide , electroplating , optoelectronics , solar cell , thin film , layer (electronics) , nanotechnology , composite material
Annealing in S vapor greatly improves the performance of electroplated Cu 2 ZnSnS 4 (CZTS) solar cells based on the bifacial configuration of Al‐doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H 2 S annealing in our previous works. S‐vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8 % was reached under 1 sun illumination from the AZO side. The well‐preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate‐type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO 2 ‐enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.