Premium
Cuprous Oxide as a Potential Low‐Cost Hole‐Transport Material for Stable Perovskite Solar Cells
Author(s) -
Nejand Bahram Abdollahi,
Ahmadi Vahid,
Gharibzadeh Saba,
Shahverdi Hamid Reza
Publication year - 2016
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201501273
Subject(s) - perovskite (structure) , materials science , layer (electronics) , deposition (geology) , chemical engineering , fabrication , oxide , energy conversion efficiency , thin film , optoelectronics , nanotechnology , metallurgy , medicine , paleontology , alternative medicine , pathology , sediment , engineering , biology
Inorganic hole‐transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu 2 O is introduced as a potential hole‐transport material for stable, low‐cost devices. Considering that Cu 2 O formation is highly sensitive to the underlying mixture of perovskite precursors and their solvents, we proposed and engineered a technique for reactive magnetron sputtering. The rotational angular deposition of Cu 2 O yields high surface coverage of the perovskite layer for high rate of charge extraction. Deposition of this Cu 2 O layer on the pinhole‐free perovskite layer produces devices with power conversion efficiency values of up to 8.93 %. The engineered Cu 2 O layers showed uniform, compact, and crack‐free surfaces on the perovskite layer without affecting the perovskite structure, which is desired for deposition of the top metal contact and for surface shielding against moisture and mechanical damages.