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Antimony Doping in Solution‐processed Cu 2 ZnSn(S,Se) 4 Solar Cells
Author(s) -
Tai Kong Fai,
Fu Dongchuan,
Chiam Sing Yang,
Huan Cheng Hon Alfred,
Batabyal Sudip Kumar,
Wong Lydia Helena
Publication year - 2015
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201500433
Subject(s) - kesterite , doping , antimony , materials science , raman spectroscopy , open circuit voltage , photoluminescence , analytical chemistry (journal) , energy conversion efficiency , impurity , chemical engineering , nanotechnology , thin film , voltage , optoelectronics , chemistry , optics , metallurgy , czts , electrical engineering , physics , engineering , organic chemistry , chromatography
Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is obtained using a facile precursor‐solution method followed by selenization. Power‐conversion efficiency of 6.0 % is achieved and further improved to 8.2 % after doping the absorber with 0.5 mol % Sb. XRD and Raman spectroscopy show similar characteristics for the undoped and doped CZTSSe. Increasing the Sb concentration increases the grain size and lowers the series resistance. However, further Sb doping beyond 0.5 mol % degrades device performance due to lower open‐circuit voltage (and therefore lower fill factor). The effect of Sb doping and the doping concentration are investigated by power‐dependent and temperature‐dependent photoluminescence studies, revealing that trap density is significant reduced with 0.5 mol % Sb doping. Additional doping beyond 0.5 mol % creates more defects that quench the photoexcited carriers and decrease the open‐circuit voltage.
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