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Cover Picture: Atomic Layer Deposition of High Performance Ultrathin TiO 2 Blocking Layers for Dye‐Sensitized Solar Cells (ChemSusChem 6/2013)
Author(s) -
Kim Do Han,
Woodroof Mariah,
Lee Kyoungmi,
Parsons Gregory N.
Publication year - 2013
Publication title -
chemsuschem
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201390023
Subject(s) - atomic layer deposition , tin oxide , materials science , layer (electronics) , deposition (geology) , nanotechnology , fluorine , doping , oxide , chemical engineering , dye sensitized solar cell , electrolyte , optoelectronics , chemistry , electrode , paleontology , sediment , engineering , metallurgy , biology
The Cover Image shows the sequential dosing and purging of TiCl 4 and H 2 O in atomic layer deposition (ALD) through step‐like pressure changes in an effort to saturate the surface of fluorine doped tin oxide (FTO) glass with each reactant. These ultra‐thin and uniform ALD TiO 2 films with thicknesses of only 5 nm form a blocking layer on the rough FTO surface to be used in dye‐sensitized solar cells (see the report by Kim et al. on page 1014 ) as the yallow photogenerated electrons to move to the FTO side effectively, thus inhibiting the recombination with holes at the FTO/electrolyte interface.