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Highly Efficient Copper–Zinc–Tin–Selenide (CZTSe) Solar Cells by Electrodeposition
Author(s) -
Jeon JongOk,
Lee Kee Doo,
Seul Oh Lee,
Seo SeWon,
Lee DohKwon,
Kim Honggon,
Jeong Jeunghyun,
Ko Min Jae,
Kim BongSoo,
Son Hae Jung,
Kim Jin Young
Publication year - 2014
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201301347
Subject(s) - materials science , crystallinity , thin film , annealing (glass) , tin , chemical engineering , czts , copper , zinc selenide , alloy , selenide , solar cell , energy conversion efficiency , metallurgy , nanotechnology , optoelectronics , composite material , selenium , engineering
Highly efficient copper–zinc–tin–selenide (Cu 2 ZnSnSe 4 ; CZTSe) thin‐film solar cells are prepared via the electrodepostion technique. A metallic alloy precursor (CZT) film with a Cu‐poor, Zn‐rich composition is directly deposited from a single aqueous bath under a constant current, and the precursor film is converted to CZTSe by annealing under a Se atmosphere at temperatures ranging from 400 °C to 600 °C. The crystallization of CZTSe starts at 400 °C and is completed at 500 °C, while crystal growth continues at higher temperatures. Owing to compromises between enhanced crystallinity and poor physical properties, CZTSe thin films annealed at 550 °C exhibit the best and most‐stable device performances, reaching up to 8.0 % active efficiency; among the highest efficiencies for CZTSe thin‐film solar cells prepared by electrodeposition. Further analysis of the electronic properties and a comparison with another state‐of‐the‐art device prepared from a hydrazine‐based solution, suggests that the conversion efficiency can be further improved by optimizing parameters such as film thickness, antireflection coating, MoSe 2 formation, and p–n junction properties.