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Atomic Layer Deposition of High Performance Ultrathin TiO 2 Blocking Layers for Dye‐Sensitized Solar Cells
Author(s) -
Kim Do Han,
Woodroof Mariah,
Lee Kyoungmi,
Parsons Gregory N.
Publication year - 2013
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201300468
Subject(s) - atomic layer deposition , layer (electronics) , deposition (geology) , dye sensitized solar cell , materials science , blocking (statistics) , electrolyte , nanotechnology , chemical engineering , pinhole (optics) , optoelectronics , chemistry , optics , electrode , physics , geology , computer science , paleontology , computer network , sediment , engineering
Invited for this month′s cover is the group of Gregory Parsons at North Carolina State University. The image shows one cycle of TiO 2 atomic layer deposition (ALD), in which the sequential dosing and purging of TiCl 4 and H 2 O forms ultrathin and conformal TiO 2 films on rough FTO glass. Pinhole‐free ALD TiO 2 forms a blocking layer to impede electron–hole recombination at the FTO/electrolyte interface in dye‐sensitized solar cells. The ALD process allows discrete tuning of the blocking‐layer thickness to maximize performance improvement. Read the full text of the article at 10.1002/cssc.201300067
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