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Influence of Composition on the Performance of Sintered Cu(In,Ga)Se 2 Nanocrystal Thin‐Film Photovoltaic Devices
Author(s) -
Akhavan Vahid A.,
Harvey Taylor B.,
Stolle C. Jackson,
Ostrowski David P.,
Glaz Micah S.,
Goodfellow Brian W.,
Panthani Matthew G.,
Reid Dariya K.,
Vanden Bout David A.,
Korgel Brian A.
Publication year - 2013
Publication title -
chemsuschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.412
H-Index - 157
eISSN - 1864-564X
pISSN - 1864-5631
DOI - 10.1002/cssc.201200677
Subject(s) - nanocrystal , oleylamine , materials science , copper indium gallium selenide solar cells , thin film , band gap , photovoltaic system , grain size , chemical engineering , energy conversion efficiency , composition (language) , nanotechnology , optoelectronics , metallurgy , biology , ecology , linguistics , philosophy , engineering
Abstract Thin‐film photovoltaic devices (PVs) were prepared by selenization using oleylamine‐capped Cu(In,Ga)Se 2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed in the devices studied was 5.1 % under air mass 1.5 global (AM 1.5 G) illumination, obtained with [Ga]/[In+Ga]=0.32. The variation in PCE with composition is partly a result of bandgap tuning and optimization, but the main influence of nanocrystal composition appeared to be on the quality of the sintered films. The [Cu]/[In+Ga] content was found to be strongly influenced by the [Ga]/[In+Ga] concentration, which appears to be correlated with the morphology of the sintered film. For this reason, only small changes in the [Ga]/[In+Ga] content resulted in significant variations in device efficiency.