Premium
Compensation Mechanism in Vanadium and Gallium Doped CdTe and (Cd,Zn)Te
Author(s) -
Joerger W.,
Laasch M.,
Kunz T.,
Fiederle M.,
Meinhardt J.,
Benz K. W.,
Scholz K.,
Wendl W.,
Müllervogt G.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320813
Subject(s) - vanadium , gallium , doping , cadmium telluride photovoltaics , compensation (psychology) , zinc , materials science , mechanism (biology) , inorganic chemistry , chemistry , nanotechnology , metallurgy , optoelectronics , physics , psychology , quantum mechanics , psychoanalysis
Vanadium and gallium doped CdTe crystals were grown from the vapour phase (modified Markov method) and (Cd 0.9 Zn 0.1 )Te: V from the melt (vertical Bridgman). The crystals were characterized by photoinduced current transient spectroscopy (PICTS), photoluminescence (PL) and time dependent charge measurements (TDCM). Transitions from different charge states (V 2+ /V 3+ ) of the vanadium donor have been observed in the V‐doped crystals by PICTS. A shallow donor level (dE = 0.068 eV) and the Ga A‐center have been identified by PICTS and PL measurements in CdTe:Ga. In case of V‐doping high resistivity is achieved all over the crystal while Ga‐doping results in a high resistivity region only in the middle of the crystal. Calculation of the resistivity by means of a compensation model shows that for both dopants an additional not observed deep donor has to be assumed in order to describe the resistivity distributions.