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Theoretical Study of Recrystallization Process of Amorphous Ge Layer Subjected to Pulsed Excimer (XeCl) Laser Radiation
Author(s) -
Klinger D.,
Auleytner J.,
Z̊ymierska D.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320712
Subject(s) - materials science , excimer laser , amorphous solid , recrystallization (geology) , laser , germanium , pulsed laser , excimer , radiation , optics , analytical chemistry (journal) , optoelectronics , chemistry , crystallography , paleontology , silicon , biology , chromatography , physics
Transient temperature profiles have been studied theoretically in amorphous germanium thin films on the crystal substrate during heating by a single laser pulse. Computer calculations have been based on the Fourier equation of the heat flow. The calculated threshold value of the energy density for the melting the whole of amorphous layer have been reported for excimer laser radiation.