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Generation of V Ga Te As V As Complexes in Tellurium‐doped n ‐type GaAs by Low‐temperature Annealing
Author(s) -
Glinchuk K. D.,
Prokhorovich A. V.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320616
Subject(s) - tellurium , annealing (glass) , gallium , arsenic , doping , crystallography , materials science , chemistry , analytical chemistry (journal) , inorganic chemistry , metallurgy , optoelectronics , chromatography
It is shown that low‐temperature annealing ( T = 425 to 625 °C, t ⩾ 0.5 h) of tellurium‐doped n ‐type GaAs crystals ( n 0 = 2 × 10 18 cm −3 ) leads to a generation of V Ga Te As V As complexes as a result of a diffusion of arsenic vacancies to V Ga Te As complexes or arsenic and gallium vacancies to isolated tellurium atoms. The observed regularities of generation of V Ga Te As V As complexes as the annealing temperature and the annealing time are varied are well explained by the proposed model of diffusion‐limited formation of V Ga Te As V As complexes.