Generation of V Ga Te As V As  Complexes in Tellurium‐doped  n ‐type GaAs by Low‐temperature Annealing | Zendy

Glinchuk K. D. | Zendy; Prokhorovich A. V. | Zendy

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Generation of V Ga Te As V As Complexes in Tellurium‐doped n ‐type GaAs by Low‐temperature Annealing

Author(s) -

Glinchuk K. D.,

Prokhorovich A. V.

Publication year - 1997

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170320616

Subject(s) - tellurium , annealing (glass) , gallium , arsenic , doping , crystallography , materials science , chemistry , analytical chemistry (journal) , inorganic chemistry , metallurgy , optoelectronics , chromatography

It is shown that low‐temperature annealing ( T = 425 to 625 °C, t ⩾ 0.5 h) of tellurium‐doped n ‐type GaAs crystals ( n 0 = 2 × 10 18 cm −3 ) leads to a generation of V Ga Te As V As complexes as a result of a diffusion of arsenic vacancies to V Ga Te As complexes or arsenic and gallium vacancies to isolated tellurium atoms. The observed regularities of generation of V Ga Te As V As complexes as the annealing temperature and the annealing time are varied are well explained by the proposed model of diffusion‐limited formation of V Ga Te As V As complexes.

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