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Electrical and Photoelectrical Properties of n ‐CuInS 2 Single Crystals
Author(s) -
Cybulski D.,
Opanowicz A.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320613
Subject(s) - photoconductivity , excitation , recombination , ionization , electron , atomic physics , materials science , acceptor , electrical resistivity and conductivity , ionization energy , molecular physics , chemistry , analytical chemistry (journal) , optoelectronics , condensed matter physics , ion , physics , biochemistry , organic chemistry , chromatography , quantum mechanics , gene
The temperature dependences of free electron density and mobility in n ‐CuInS 2 single crystals have been determined from the Hall effect measurements. The ionization energy of donors and their densities have been estimated. The results of measurements show that the crystals are strongly compensated. The spectral distribution of photoconductivity, the dependence of photoconductivity on excitation intensity, and the photoconductivity decay with time have been measured in the n ‐CuInS 2 crystals at different temperatures. The results of photo‐conductivity measurements suggest linear recombination of photo‐electrons at weak excitation and quadratic recombination at high excitation intensity. The compensated deep acceptor probably acts as the recombination centre.