In situ  Observation Setup for Semiconductor Growth Interface from Solution in a Magnetic Field | Zendy

Inatomi Y. | Zendy; Dold P. | Zendy; Danilewsky A. N. | Zendy; Benz K. W. | Zendy

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In situ Observation Setup for Semiconductor Growth Interface from Solution in a Magnetic Field

Author(s) -

Inatomi Y.,

Dold P.,

Danilewsky A. N.,

Benz K. W.

Publication year - 1997

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170320604

Subject(s) - semiconductor , cadmium telluride photovoltaics , interface (matter) , magnetic field , in situ , materials science , infrared , optoelectronics , optics , visualization , semiconductor materials , physics , mechanical engineering , engineering , composite material , wetting , meteorology , sessile drop technique , quantum mechanics

A setup for in situ observation was developed which makes possible the optical visualization of a solid‐liquid interface during solution growth of semiconductors in an external magnetic field. This setup consisted of an optimized monoellipsoidal mirror furnace, a near‐infrared optical system, and static or rotating electromagnetic facility. The target crystals were GaP, GaAs and CdTe.

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