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In situ Observation Setup for Semiconductor Growth Interface from Solution in a Magnetic Field
Author(s) -
Inatomi Y.,
Dold P.,
Danilewsky A. N.,
Benz K. W.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320604
Subject(s) - semiconductor , cadmium telluride photovoltaics , interface (matter) , magnetic field , in situ , materials science , infrared , optoelectronics , optics , visualization , semiconductor materials , physics , mechanical engineering , engineering , composite material , wetting , meteorology , sessile drop technique , quantum mechanics
A setup for in situ observation was developed which makes possible the optical visualization of a solid‐liquid interface during solution growth of semiconductors in an external magnetic field. This setup consisted of an optimized monoellipsoidal mirror furnace, a near‐infrared optical system, and static or rotating electromagnetic facility. The target crystals were GaP, GaAs and CdTe.