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On the conduction mechanism and thermoelectric phenomena in In 6 S 7 layer crystals
Author(s) -
Gamal G. A.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320517
Subject(s) - seebeck coefficient , thermal conduction , condensed matter physics , electrical resistivity and conductivity , crystal (programming language) , conductivity , materials science , thermoelectric effect , scattering , hall effect , electron , atmospheric temperature range , carrier scattering , single crystal , chemistry , thermal conductivity , thermodynamics , optics , physics , crystallography , composite material , quantum mechanics , computer science , programming language
In the present paper, measurements of the electrical conductivity and Hall coefficient on single crystal of In 6 S 7 , grown by a new crystal growth technique, were done. The crystal was found to be of n ‐type conductivity. The low conductivity sample showed as the most striking feature an exponential increase of the Hall mobility with temperature. This effect was explained by assuming a mixed conduction and different scattering mechanisms for electrons and holes in the same temperature range. Also we have made thermoelectric power measurements to support this assumption. An energy gap of 0.64 eV was found.