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Diffusion Control during Vapour Crystal Growth
Author(s) -
Nanev Chr. N.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320502
Subject(s) - diffusion , inert gas , crystal growth , crystal (programming language) , argon , sorption , surface diffusion , materials science , kinetics , water vapor , microstructure , atmosphere (unit) , inert , chemistry , chemical physics , analytical chemistry (journal) , crystallography , thermodynamics , composite material , adsorption , physics , organic chemistry , chromatography , computer science , programming language , quantum mechanics
The crystal growth rate under diffusion control is considered. Together with nutrient diffusion, the physi‐sorption of an inert gas, which impedes the surface kinetics during vapour growth, is taken into consideration. In this way the size of the diffusion field surrounding vapour grown crystals was estimated. The relations obtained are checked with data for the growth of zinc single crystals in argon atmosphere. The appearance of shallow cavities on their basal faces is used as a morphological mark for growth under diffusion control. Besides, the microstructure of the inner edge of the macroscopically flat periphery, surrounding the shallow cavities is investigated experimentally, by means of SEM.