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New technique for crystal growth and Phase Transition in TlInS 2 Crystals
Author(s) -
Gamal G. A.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320410
Subject(s) - impurity , crystal (programming language) , hall effect , conductivity , phase transition , electrical resistivity and conductivity , materials science , crystal growth , ionization energy , ionization , electron mobility , phase (matter) , condensed matter physics , analytical chemistry (journal) , chemistry , crystallography , optoelectronics , ion , physics , organic chemistry , quantum mechanics , chromatography , computer science , programming language
New technique for crystal growth was designed in the present work. The electrical conductivity and Hall effect of the TInS 2 single crystals, grown by this technique, were measured in the temperature range 150–500 K. From the measurements, the conductivity type, the energy gap, ionization energy of the impurity level, Hall mobility and carrier concentration were determined. Also the measurements revealed a presence of phase transition in the crystal at 189 and 220 K.