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Influence of Rapid Thermal Processing on the Orientation Properties of PbTiO 3 Thin Film
Author(s) -
Zhu Jianguo,
Xiao Dingquan,
Peng Wenbing,
Lan Fahua,
Wan Deren
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320312
Subject(s) - thin film , materials science , rapid thermal processing , crystallite , amorphous solid , annealing (glass) , fabrication , sputtering , ferroelectricity , optoelectronics , composite material , nanotechnology , crystallography , metallurgy , silicon , chemistry , dielectric , medicine , alternative medicine , pathology
Abstract Rapid thermal processing (RTP) has developed in fabrication of ferroelectric (FE) thin films because it can reduce processing temperature and time. It also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi‐ion‐beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post‐deposition annealing in a RTP system. It was found that PbTiO 3 (PT) thin film can grow on amorphous or polycrystalline interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures.

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