Premium
PVT and CVT Growth and Characterization of SnS x Se 2‐x (0 ≤ x ≤ 2) Single Crystals
Author(s) -
Patel D. H.,
Patel R. G.,
Arora S. K.,
Agarwal M. K.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320311
Subject(s) - ampoule , electrical resistivity and conductivity , characterization (materials science) , materials science , hall effect , solid solution , crystal growth , tin , crystallography , microstructure , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , physics , metallurgy , composite material , chromatography , quantum mechanics
Single crystals of solid solutions of tin sulphoselenide have been grown in the same ampoule. Specific conditions for growing single crystals of SnSSe have also been identified. A study of microstructures on the growth surfaces responds to the mechanism of growth of these crystals. The dependence of electrical resistivity, Hall mobility and carrier concentration with the values of the configuration parameter 2 has been studied.