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Crystal Data, Electrical Resisitivity and Mobility in Cu 3 In 5 Se 9 and Cu 3 In 5 Te 9 Single Crystals
Author(s) -
Parlak M.,
Erçeleb Ç.,
Günal İ.,
Özkan H.,
Gasanly N. M.,
Çulfaz A.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320305
Subject(s) - electrical resistivity and conductivity , impurity , tetragonal crystal system , ionized impurity scattering , orthorhombic crystal system , atmospheric temperature range , scattering , activation energy , electron mobility , analytical chemistry (journal) , band gap , materials science , hall effect , condensed matter physics , chemistry , crystal structure , crystallography , physics , optoelectronics , organic chemistry , chromatography , meteorology , optics , quantum mechanics
X‐ray powder diffraction data were obtained for Cu 3 In 5 Se 9 and Cu 3 Te 9 , which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu 3 In 5 Se 9 , was identified to be n ‐type with a room temperature resistivity of 3 × 10 3 Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu 3 In 5 Te 9 exhibits p ‐type conduction with a room temperature resistivity of 8.5 × 10 −3 Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively.