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Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n‐type GaAs
Author(s) -
Glinchuk K. D.,
Prokhorovich A. V.
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320304
Subject(s) - irradiation , copper , annealing (glass) , neutron , emission intensity , neutron irradiation , materials science , intensity (physics) , analytical chemistry (journal) , radiative transfer , chemistry , radiochemistry , atomic physics , doping , optics , optoelectronics , nuclear physics , physics , metallurgy , chromatography
Abstract Effect of neutron irradiation ( E = 2 MeV, ϕ ≤ 10 15 n/cm 2 ) and subsequent annealing ( T ≤ 700 °C, t = 30 min) on the intensity of the copper‐related peaked at hv m =1.01 eV emission band in n ‐type GaAs (n 0 = 2 × 10 18 cm −3 ) is studied. A strong irradiation‐induced increase of the above emission intensity was observed testifying about the irradiation‐stimulated growth in the concentration of copper‐related 1.01 eV radiative centres (Cu Ga V As pairs). A model is presented to explain this effect.