Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n‐type GaAs | Zendy

Glinchuk K. D. | Zendy; Prokhorovich A. V. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n‐type GaAs

Author(s) -

Glinchuk K. D.,

Prokhorovich A. V.

Publication year - 1997

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170320304

Subject(s) - irradiation , copper , annealing (glass) , neutron , emission intensity , neutron irradiation , materials science , intensity (physics) , analytical chemistry (journal) , radiative transfer , chemistry , radiochemistry , atomic physics , doping , optics , optoelectronics , nuclear physics , physics , metallurgy , chromatography

Effect of neutron irradiation ( E = 2 MeV, ϕ ≤ 10 15 n/cm 2 ) and subsequent annealing ( T ≤ 700 °C, t = 30 min) on the intensity of the copper‐related peaked at hv m =1.01 eV emission band in n ‐type GaAs (n 0 = 2 × 10 18 cm −3 ) is studied. A strong irradiation‐induced increase of the above emission intensity was observed testifying about the irradiation‐stimulated growth in the concentration of copper‐related 1.01 eV radiative centres (Cu Ga V As pairs). A model is presented to explain this effect.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research