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Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy
Author(s) -
Iller Alicja,
Marks Jerzy,
Grzegory Izabela,
LitwinStaszewska Elżbieta,
Boćkowski Michal
Publication year - 1997
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170320204
Subject(s) - auger electron spectroscopy , polarity (international relations) , polar , auger , analytical chemistry (journal) , spectroscopy , materials science , electron spectroscopy , electron , layer (electronics) , surface (topology) , sample (material) , chemistry , atomic physics , nanotechnology , physics , biochemistry , chromatography , astronomy , quantum mechanics , nuclear physics , cell , geometry , mathematics
An attempt to identify the polarity of (0001) polar surface of GaN bulk single crystals grown by high nitrogen pressure solution method has been made using Auger electron spectroscopy (AES). AES concentration depth profiles of the top layer in (0001) direction starting from both (0001) faces of the sample have been measured. Distinct difference in the Ga concentration at the sample surface of both faces has been observed. The dependence of Ga eoncentration on depth is also different for both faces of the sample.