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Quenching by Copper Atoms of the EL2‐induced Luminescence in GaAs
Author(s) -
Glinchuk K. D.,
Prokhorovich A. V.,
Vorobkalo F. M.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310813
Subject(s) - copper , luminescence , passivation , gallium , quenching (fluorescence) , arsenic , chemistry , inorganic chemistry , crystallography , materials science , fluorescence , optoelectronics , optics , physics , organic chemistry , layer (electronics)
It is shown that the introduction of copper atoms into GaAs crystals containing antistructure defects EL2 (isolated arsenic atoms on gallium sites As Ga ) leads to a practically complete disappearance of the EL2‐induced luminescence bands peaked at 0.63 and 0.68eV. This effect is connected with the passivation of the EL2 defects (i.e. with the substantial decrease in their concentration) because of their interaction with copper atoms (they become bound by copper atoms) resulting in an appearance of electrically inactive AS Ga CU Ga complexes.