Doping Properties of Pr 2 O 3  Associate InP Liquid Phase Epitaxy | Zendy

Chang LiannBe | Zendy; Liu C. C. | Zendy; Cheng Y. C. | Zendy; Chang L. B. | Zendy

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Doping Properties of Pr 2 O 3 Associate InP Liquid Phase Epitaxy

Author(s) -

Chang LiannBe,

Liu C. C.,

Cheng Y. C.,

Chang L. B.

Publication year - 1996

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170310718

Subject(s) - photoluminescence , epitaxy , doping , impurity , full width at half maximum , materials science , analytical chemistry (journal) , liquid phase , hall effect , crystal (programming language) , phase (matter) , yield (engineering) , spectral line , crystallography , mineralogy , optoelectronics , chemistry , electrical resistivity and conductivity , nanotechnology , physics , layer (electronics) , metallurgy , organic chemistry , chromatography , quantum mechanics , astronomy , computer science , programming language , thermodynamics

InP epilayers were grown on semi‐insulating InP substrates by liquid phase epitaxy with Pr 2 O 3 ‐doping. Most grown layers yield mirror‐like surfaces and good crystal quality. Hall measurements indicate that n‐type background concentration of those grown InP layers will decrease from a value of 2.8 × 10 17 to 3.0 × 10 16 cm −3 . Their correspondent 77 K mobility also varied from a value of 1326 to 3775 cm 2 /V s. The photoluminescence (PL) spectra of Pr 2 O 3 ‐doped InP epilayers display narrower FWHM and stronger intensity ratios (for band peak to the impurity peak). These PL spectra also demonstrate that the grown layers exhibit a pure crystal quality.

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