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Doping Properties of Pr 2 O 3 Associate InP Liquid Phase Epitaxy
Author(s) -
Chang LiannBe,
Liu C. C.,
Cheng Y. C.,
Chang L. B.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310718
Subject(s) - photoluminescence , epitaxy , doping , impurity , full width at half maximum , materials science , analytical chemistry (journal) , liquid phase , hall effect , crystal (programming language) , phase (matter) , yield (engineering) , spectral line , crystallography , mineralogy , optoelectronics , chemistry , electrical resistivity and conductivity , nanotechnology , physics , layer (electronics) , metallurgy , organic chemistry , chromatography , quantum mechanics , astronomy , computer science , programming language , thermodynamics
InP epilayers were grown on semi‐insulating InP substrates by liquid phase epitaxy with Pr 2 O 3 ‐doping. Most grown layers yield mirror‐like surfaces and good crystal quality. Hall measurements indicate that n‐type background concentration of those grown InP layers will decrease from a value of 2.8 × 10 17 to 3.0 × 10 16 cm −3 . Their correspondent 77 K mobility also varied from a value of 1326 to 3775 cm 2 /V s. The photoluminescence (PL) spectra of Pr 2 O 3 ‐doped InP epilayers display narrower FWHM and stronger intensity ratios (for band peak to the impurity peak). These PL spectra also demonstrate that the grown layers exhibit a pure crystal quality.