Premium
Transport Properties of TlInSe 2 Single Crystals
Author(s) -
Elshaikh H. A.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310717
Subject(s) - seebeck coefficient , atmospheric temperature range , charge carrier , hall effect , thermal conduction , electrical resistivity and conductivity , scattering , materials science , condensed matter physics , range (aeronautics) , electron mobility , thermoelectric effect , activation energy , conductivity , carrier scattering , analytical chemistry (journal) , chemistry , optoelectronics , thermal conductivity , thermodynamics , optics , electrical engineering , physics , composite material , chromatography , engineering
Single crystals of TlInSe 2 were prepared by a special modified Bridgman technique. The influence of temperature on the electrical conductivity, Hall effect, Hall mobility, and the carrier concentration was investigated in the temperature range 190–625 K. The energy gap of conduction was calculated. The scattering mechanism of the charge carrier was discussed in the same temperature range. Beside this, the thermoelectric power was measured in a temperature range extending from 190 up to 485 K.