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Silicon Tubes for Microelectronic Applications Grown Directly from the Melt
Author(s) -
Vanca V.,
Dinu M.,
Enache V.,
Schlett Z.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310703
Subject(s) - microelectronics , materials science , tube (container) , silicon , meniscus , composite material , temperature gradient , optics , optoelectronics , physics , incidence (geometry) , quantum mechanics
A die‐free technique for growing large diameter silicon tubes (5–15cm) directly from the melt has been developed. The attained result was a constant tube wall thickness for a range of 7 to 0.2 mm at 1500 mm length limited by the equipment pulling stroke. It is shown that the inner pressure of the tube is function of the meniscus height at the growth interface. A speed is also presented. By means of experiments the thermal gradient at the solid‐liquid interfaces is determined.