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Transport Coefficients of (Bi 1‐x Sb x ) 2 Se 3 Single Crystals
Author(s) -
Drašar Č.,
Klichová I.,
Koudelka L.,
Lošťák P.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310616
Subject(s) - antimony , impurity , seebeck coefficient , hall effect , crystallographic defect , analytical chemistry (journal) , electrical resistivity and conductivity , materials science , conductivity , atmospheric temperature range , crystallography , chemistry , thermal conductivity , inorganic chemistry , thermodynamics , physics , organic chemistry , chromatography , quantum mechanics , composite material
(Bi 1‐ x Sb x ) 2 Se 3 ( x = 0.0 to 0.2) single crystals were prepared using a modified Bridgman method. Measurements of the Hall coefficient R H , electrical conductivity σ and Seebeck coefficient α showed that incorporation of the antimony atoms into the Bi 2 Se 3 crystal lattice results in an increase in the free electron concentration for a low antimony content, whereas the free electron concentration is suppressed in the range of a high antimony content. This effect is explained qualitatively by changes in the concentrations of point defects in the (Bi 1‐ x Sb x ) 2 Se 3 crystals. We asume that the substitution of Bi atoms by Sb atoms results in a decrease in the concentration of Se vacancies V Se −and antisite defects Bí Se . The course of the dependences of In ( R H σ) vs In T manifests that in the temperature region of 100–400 K transport properties of the studied crystals are characterized by a mixed transport mechanism of free carriers, mainly on acoustical phonons and ionized impurities.