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X‐ray Topographic Assessment of Defects in Pure and Substituted Hexaferrite Crystals
Author(s) -
Raina Urvashi,
Bhat Sushma,
Kotru P. N.,
Franzosi P.,
Licci F.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310613
Subject(s) - diffraction , reflection (computer programming) , materials science , x ray , fractography , etching (microfabrication) , strain (injury) , crystallography , isotropic etching , flux (metallurgy) , optics , composite material , chemistry , scanning electron microscope , metallurgy , physics , medicine , layer (electronics) , computer science , programming language
Abstract Results of X‐ray diffraction topography, in reflection and transmission scanning geometry, of flux grown single crystals of substituted and unsubstituted hexaferrites bearing composition SrGa x In y Fe 12‐( x+y ) O 19 (where x = 0, 5, 7, 9; y = 0, 0.8, 1.3, 1.0) are presented. Diffraction topographs reveal defects like misoriented grains, dislocations, cavities, inclusions, and the strain patterns in these crystals. The unsubstituted hexaferrites exhibit better perfection when compared to the substituted ones. The study is reported to support the results obtained by chemical etching and fractography, besides yielding additional information covering defects.