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Anisotropy of Electrical Resistivity and Hole Mobility in InTe Single Crystals
Author(s) -
Parlak M.,
Erçelebi Ç.,
Günal I.,
Özkan H.,
Gasanly N. M.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310525
Subject(s) - electrical resistivity and conductivity , condensed matter physics , anisotropy , perpendicular , atmospheric temperature range , electron mobility , stacking , phonon , scattering , polar , hall effect , materials science , chemistry , physics , optics , geometry , mathematics , organic chemistry , quantum mechanics , astronomy , meteorology
The temperature dependences of the electrical resistivity and Hall mobility of p ‐type InTe chain single crystals in parallel and perpendicular directions to c ‐axis have been investigated in the temperature range of 28–260 K. The high anisotropy between ∂‖ and ∂⟂ which depends on temperature is attributed to high concentration of stacking faults due to weak interchain bonding. The mobility parallel to c ‐axis was found to vary with temperature asμ α T n where n = ‐0.6 due to hole scattering on polar optical phonons. The mobility perpendicular to c ‐axis above 140 K increases with temperature exponentially with an activation energy of 0.03 eV which is attributed to the hopping mechanism due to the barriers between the chains.