Premium
A Comparison of Different Multiple‐Crystal Diffractometer Arrangements to Measure the Reflection Curve of SiGe Layers on Si Substrates
Author(s) -
Zaumseil P.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310419
Subject(s) - diffractometer , reflection (computer programming) , monochromator , collimator , crystal (programming language) , optics , materials science , substrate (aquarium) , measure (data warehouse) , maxima and minima , layer (electronics) , optoelectronics , physics , nanotechnology , mathematics , wavelength , mathematical analysis , oceanography , database , computer science , programming language , geology , scanning electron microscope
Five different double‐ and triple‐crystal diffractometer (DCD, TCD) arrangements are used to measure the reflection curve of a heteroepitaxial structure consisting of a 41 nm thick Si 1‐ x Ge x layer ( x = 0.327) on an Si‐100 substrate. The advantages and disadvantages of these arrangements including different monochromator/collimator and analyzer set‐ups are discussed. It is shown that even for this perfect heteroepitaxial layer TCD measurements provide the best results especially in the reproduction of deep minima of the intensity oscillations in the reflection curve.