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Crystallization and Thermoelectric Power of Tl 2 Te 3 Single Crystals
Author(s) -
Gamal G. A.,
Nassary M. M.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310309
Subject(s) - seebeck coefficient , thermoelectric effect , atmospheric temperature range , electron , analytical chemistry (journal) , electrical resistivity and conductivity , materials science , crystallization , diffusion , electron mobility , relaxation (psychology) , conductivity , chemistry , crystallography , thermodynamics , physics , psychology , social psychology , organic chemistry , optoelectronics , chromatography , quantum mechanics
Thermoelectric power (TEP) of Tl 2 Te 3 was measured in the temperature range from 150 to 480 K. The crystal was found to have a p‐type conductivity throughout the whole range of temperature. The effective masses of holes and electrons were determined at room temperature and found to be m   p *= 1.1 × 10 −34 kg and m   n *= 1.72 × 10 −35 kg, respectively. Also at the same temperature the mobility μ p was found to be 1737.8 cm 2 /V.s and μ n was 3962.2 cm 2 /V.s. The hole and electron diffusion coefficients were obtained as 44.84 cm 2 /s, and 102.23 cm 2 /s. The relaxation times for holes and electrons were calculated and yielded the values τ p = 1.19 × 10 12 s and τ n = 4.25 × 10 13 s, respectively.

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