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Diamond Synthesis by Thermal Plasma Chemical Vapour Deposition (TP‐CVD)
Author(s) -
Presia M.,
Heider Th.,
Schleicher L.,
Nutsch G.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310206
Subject(s) - diamond , chemical vapor deposition , scanning electron microscope , raman spectroscopy , materials science , silicon , analytical chemistry (journal) , material properties of diamond , amorphous solid , plasma enhanced chemical vapor deposition , plasma , chemical engineering , nanotechnology , chemistry , crystallography , optics , metallurgy , composite material , physics , chromatography , quantum mechanics , engineering
This paper reviews results about diamond synthesis by high‐temperature pyrolysis of methane in a H 2 /Ar‐plasma. By means of a modified direct‐current (DC) plasma torch with an arc power of 4–8 kW diamond growth rates in the order of about 70 μm/h were obtained. Diamond films grown on unscrached single‐crystalline silicon have a diameter of about 8 mm. Scanning electron microscopy (SEM), X‐ray diffractometry (XRD), and Raman scattering spectroscopy have been used to analyse diamond films characterized by a transition of a crystalline diamond centre to an amorphous random region by passing a fine‐crystalline region. In the film centre (100) planes with an average size of about 25 μm were made out by SEM.