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Optical Investigation of Defects in p‐type CuInSe 2 Single Crystals
Author(s) -
Neumann H.,
Jones P. A.,
Sobotta H.,
Hörig W.,
Tomlinson R. D.,
Yakushev M. V.
Publication year - 1996
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170310113
Subject(s) - absorption edge , spectral line , photon energy , absorption (acoustics) , acceptor , absorption spectroscopy , range (aeronautics) , attenuation coefficient , enhanced data rates for gsm evolution , chemistry , single crystal , atomic physics , materials science , molecular physics , analytical chemistry (journal) , band gap , photon , crystallography , optics , optoelectronics , condensed matter physics , physics , telecommunications , astronomy , computer science , composite material , chromatography
Optical absorption spectra in the photon energy range from 0.03 to 1.1 eV and photoreflectance spectra in the range of the fundamental edge are measured on p‐type CuInSe 2 single crystals. Besides a dominant contribution to the absorption coefficient due to intervalence band transitions below about 0.75 eV the spectra revealed five additional structures that can be ascribed to defect induced optical transitions with characteristic energies between 0.48 and 0.72 eV. Based on a comparison of the near‐edge optical absorption and photoreflectance spectra a shallow defect (donor or acceptor) with an ionisation energy of about 46 meV was identified.