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Stacking Fault Energy of Silicon Carbide (SiC) Polytypes
Author(s) -
Khan M. Y.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300821
Subject(s) - silicon carbide , stacking , stacking fault energy , materials science , energy (signal processing) , stacking fault , carbide , crystallography , silicon , condensed matter physics , chemistry , optoelectronics , composite material , physics , dislocation , organic chemistry , quantum mechanics
A polytypic material grown under similar thermodynamic conditions occurs in several phases which are included as ordered and disordered ones. These phases occur with a minimum free energy difference ≅ kT. This relative free energy (stacking fault energy) has been evaluated here using different methods.