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Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique
Author(s) -
Frank C.,
Hein K.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300703
Subject(s) - materials science , acceptor , dislocation , silicon , crystal growth , crystallography , analytical chemistry (journal) , optoelectronics , condensed matter physics , chemistry , chromatography , composite material , physics
GaAs crystals having dislocation densities of 1–2 10 3 cm −2 were grown using VGF technique. In the grown crystals Si Ga is the dominant donor and C As the dominant acceptor. Theoretical and experimental investigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating properties in the crystals could be achieved reproducibly.