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X‐ray Monitoring System for in situ Investigation of Thin Film Growth
Author(s) -
Mikhailov I. F.,
Pinegin V. I.,
Sleptzov V. V.,
Baranov A. M.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300510
Subject(s) - in situ , reflectivity , materials science , range (aeronautics) , thin film , layer (electronics) , diamond , optics , transition layer , x ray reflectivity , optoelectronics , nanotechnology , composite material , physics , meteorology
The X‐ray optical system of in situ monitoring of reflectivity measured in the short‐wave range 0.5–3 Å is proposed. Thickness, density, and microroughness of the growing film are determined for every half‐wave of reflectivity oscillations that corresponds to the averaging by the layer of 10 Å thickness. By the example of diamond‐like film growing, the possibility of an analysis of transition processes and technology failure during film growth have been shown.