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High Quality InAs 1– y Sb y /InAs Multilayers for mid‐IR Detectors
Author(s) -
Gong X. Y.,
Kan H.,
Makino T.,
Yamaguchi T.,
Nakatskasa T.,
Kumagawa M.,
Rowell N. L.,
Wang A.,
Rinfret R.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300505
Subject(s) - photoluminescence , materials science , ellipsometry , epitaxy , band gap , doping , substrate (aquarium) , photodetector , molecular beam epitaxy , lattice constant , optoelectronics , transmittance , analytical chemistry (journal) , thin film , optics , chemistry , nanotechnology , layer (electronics) , diffraction , physics , oceanography , geology , chromatography
The high quality InAsSb multi‐layers have been grown on InAs substrate by Gd‐doped liquid phase epitaxy between 530 and 460°C. Compositional dependence of energy band gap and of lattice constant for epilayers were studied. The material is characterized by surface morphology observation, FTIR transmittance, photoluminescence (PL), spectro‐ellipsometry, and electrical measurements. Surface‐illuminated room temperature p‐n junction photodetectors in 3–5 μm wavelength range have been obtained.