Premium
Photoacoustic Spectroscopy of Defect States in Etched and Air‐annealed CuInSe 2 Single Crystals
Author(s) -
Zegadi A.,
Yakushev M. V.,
Neumann H.,
Slifkin M. A.,
Tomlinson R. D.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300417
Subject(s) - annealing (glass) , crystallographic defect , polishing , materials science , photoacoustic spectroscopy , spectral line , spectroscopy , crystallography , isotropic etching , analytical chemistry (journal) , etching (microfabrication) , chemistry , photoacoustic imaging in biomedicine , optics , nanotechnology , metallurgy , layer (electronics) , physics , quantum mechanics , astronomy , chromatography
Photoacoustic spectra of cleaved, polished and etched, and air‐annealed n‐type CuInSe 2 single crystals are measured at different frequencies between 30 and 312 Hz. The spectra related to the bulk of the crystals exhibit five structures due to defects that are also present in p‐type crystals. Polishing and etching as well as subsequent air annealing at 100, 200 and 300 °C reveal rather complex changes of the defect equilibrium in the near‐surface region of the crystals which include both relative concentration changes of existing defects and creation of new defects. The results for polished and etched crystals correspond to trends expected from etching induced local modifications of the composition and structure as revealed by electron spectroscopies and ion channeling. Air annealing is found to affect all existing defects and to create up to five new defects which cannot be explained in terms of the related point defect model proposed by CAHEN and NOUFI.