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Electrical Properties of Praseodymium‐doped GaAs and Al 0.3 Ga 0.7 As Epilayers
Author(s) -
Lai M. Z.,
Chang L. B.,
Chen C. C.,
Wang H. T.,
Jiang G. C.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300327
Subject(s) - praseodymium , doping , materials science , epitaxy , hall effect , photoluminescence , secondary ion mass spectrometry , analytical chemistry (journal) , acceptor , electrical resistivity and conductivity , getter , optoelectronics , ion , condensed matter physics , chemistry , nanotechnology , layer (electronics) , metallurgy , physics , organic chemistry , chromatography , electrical engineering , engineering
Praseodymium‐doped GaAs and Al 0.3 Ga 0.7 As epilayers grown on Semi‐Insulating (SI) GaAs substrates by Liquid Phase Epitaxy (LPE) were first studied in this present work. Measurement techniques, such as microscopic observation, X‐ray diffraction, Secondary Ion Mass Spectroscopy (SIMS), and Hall measurement were employed. Layers doped with Pr resulted in a mirror‐like surface, except several high Pr‐doped layers having droplet surfaces. Hall measurements reveal that the grown layers contained p‐type layers, carrier concentrations from 6.3 × 10 15 to 1.2 × 10 16 cm −3 , and from 6.3 × 10 15 to 3.5 × 10 16 cm −3 for Pr‐doped GaAs and Al 0.3 Ga 0.7 As epilayers, respectively. Although p‐type conduction exists, in the light of electrical features, doping of Pr into the GaAs and Al 0.3 Ga 0.7 As growth melts, is still considered to exhibit gettering properties rather than to become a new acceptor itself. Additional photoluminescence examinations were taken. Their results also indicate that Pr‐doped layers produce no new emission lines and support the electrical observations.