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Twins in GaAs Crystals Grown by the Vertical Gradient Freeze Technique
Author(s) -
Koh H. J.,
Fukuda T.,
Choi M. H.,
Park I. S.
Publication year - 1995
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170300321
Subject(s) - nucleation , supercooling , crucible (geodemography) , facet (psychology) , temperature gradient , macle , enhanced data rates for gsm evolution , materials science , condensed matter physics , crystallography , polarity (international relations) , plane (geometry) , optics , crystal twinning , mineralogy , chemistry , geometry , microstructure , thermodynamics , physics , computer science , telecommunications , quantum mechanics , big five personality traits , computational chemistry , organic chemistry , personality , cell , biochemistry , psychology , social psychology , mathematics
The growth of facets and the generation of twins on <100> VGF (vertical gradient freeze technique) grown GaAs were investigated using DSL (diluted Sirtl‐like etchant with light) photoetching and transmission X‐ray topography. Due to the polarity of the (111) plane in GaAs, As facets are larger and more irregular than Ga facets and twins always occur on As facets. Twins are initiated at the change of boundary condition which is affected by temperature gradient and crucible shape. The mechanism of twin generation is explained by considering the edge concavity at the solid‐liquid interface and the supercooling required for initial nucleation of a facet. Twins are more often produced in Si‐doped crystals than undoped ones due to the constitutional supercooling.